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IRF7862TRPBF
Brand：INFINEON
Package：---
Category：Discrete Semiconductor Products
D/C：24+
MOQ：
Datasheet：---
In-Stock：7380
QUANTITY
Product Attributes
Mfr
Infineon Technologies
Series
HEXFET®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
21A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4090 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Product Description
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正品保证
genuine product guarantee
一站式采购
one-stop shopping
海量现货
Large spot inventory
Phone：
00852-21119552(Hongkong)
Email：
system@real-concept.net
Fax：
00852-21119557
Address：
ROOM 607, KINGSFORD INDUSTRIAL CENTRE, 13 WANG HOI ROAD, KOWLOON BAY