The BSC035N10NS5 is a high-performance 1200 V silicon carbide (SiC) MOSFET from Infineon’s CoolSiC™ MOSFET family, designed for high-efficiency power conversion in demanding industrial and automotive applications. This device combines a blocking voltage of 1200 V with a continuous drain current of 35 A, enabling robust operation in harsh electrical environments. It features an ultra-low on-resistance (RDS(on) = 10.5 mΩ at 25°C) and fast switching capabilities, minimizing power losses in high-frequency circuits. Housed in a compact TO-247-4L package, it offers enhanced thermal performance and simplified gate drive integration for high-power-density designs.

Key Features

The BSC035N10NS5 delivers exceptional efficiency with minimal switching losses (Eon = 3.3 mJ, Eoff = 1.5 mJ) and a low gate charge (Qg = 43 nC), enabling operation at frequencies up to 100 kHz. Its wide operating temperature range (-55°C to +175°C) ensures reliability in extreme conditions, while SiC’s inherent thermal stability and voltage tolerance simplify system cooling requirements. The device supports avalanche-rated ruggedness and operates without additional snubber circuits in hard-switching topologies. Integrated anti-body diode and soft-recovery characteristics further reduce electromagnetic interference (EMI).

Applications

Primarily used in electric vehicle (EV) charging infrastructure, the BSC035N10NS5 is critical for on-board chargers, DC-DC converters, and traction inverters. It is widely employed in renewable energy systems such as solar inverters, wind turbines, and grid-tied converters, as well as industrial applications like motor drives, UPS systems, and high-power SMPS. Its high-temperature tolerance and low-loss performance make it ideal for compact, high-power-density designs in aerospace, defense, and industrial automation.

Summary

The BSC035N10NS5 leverages SiC technology to deliver exceptional efficiency, thermal resilience, and high-power capability, making it a cornerstone for next-generation power conversion systems. Its low losses, wide operating range, and rugged design cater to applications demanding peak performance in harsh environments, such as EVs, renewable energy, and industrial power electronics. This MOSFET is essential for engineers aiming to optimize energy efficiency and reduce system size in high-voltage, high-current applications.