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2N7002K-T1-GE3
2N7002K-T1-GE3
Brand:VISHAY
Package:---
Category:Discrete Semiconductor Products
D/C:23+
MOQ:
Datasheet:---
In-Stock:8425
QUANTITY
Product Attributes
Mfr
Vishay Siliconix
Series
TrenchFET?
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250?A
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V
Vgs (Max)
?20V
Input Capacitance (Ciss) (Max) @ Vds
30 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
350mW (Ta)
Operating Temperature
-55?C ~ 150?C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Product Description
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