SI2305CDS-T1-GE3: A High-Performance P-Channel MOSFET

The SI2305CDS-T1-GE3 is a high-performance P-Channel MOSFET manufactured by Vishay Semiconductor, a renowned supplier of semiconductor components. This MOSFET offers excellent electrical characteristics and is suitable for a variety of low-power switching and current control applications.

Key Features and Specifications

• Manufacturer: Vishay Semiconductor
• Product Number: SI2305CDS-T1-GE3
• Package Type: SOT-23-3 (a compact surface-mount package with 3 pins)
• Polarity: P-Channel
• Drain-Source Voltage (Vds): 8 V (with some variations indicating a maximum of 20 V)
• Continuous Drain Current (Ids): 4.4 A (some sources mention up to 5.8 A)
• On-State Resistance (RDS(on)): 0.028 Ω or 35 mΩ @ certain conditions (varies with Vgs and Id)
• Threshold Voltage (Vth): Typically 1 V, with some variations
• Power Dissipation (Pd): 1.7 W (maximum)
• Operating Temperature Range: -55 °C to 150 °C
• Input Capacitance (Ciss): 960 pF @ 4 V (Vds)
• Rise Time: 20 ns
• Fall Time: 10 ns
• Dimensions: 3.04 mm (length) x 1.4 mm (width) x 1.02 mm (height) (approximate)
• Compliance: RoHS compliant, lead-free, and REACH SVHC-free

Functional Overview

The SI2305CDS-T1-GE3 is a P-Channel MOSFET designed for low-power switching and current control applications. It operates in enhancement mode and utilizes TrenchFET technology for improved performance. The device features low on-state resistance and fast switching speeds, making it suitable for use in compact and power-efficient designs.

Applications

Due to its compact package and excellent electrical characteristics, the SI2305CDS-T1-GE3 is widely used in various applications, including:

• Portable Devices: Ideal for power management in smartphones, tablets, and other portable electronics.
• Industrial Applications: Suitable for use in industrial automation systems, where low-power switching and current control are required.
• Power Management: Can be used in power management circuits to efficiently control and regulate power flow.

Packaging and Availability

The SI2305CDS-T1-GE3 is available in tape and reel packaging, which facilitates automated assembly and ensures safe delivery. It is widely distributed through electronic component distributors and can be easily sourced for use in various electronic designs.

Conclusion

The SI2305CDS-T1-GE3 is a high-performance P-Channel MOSFET that offers excellent electrical characteristics and is suitable for a variety of low-power switching and current control applications. Its compact package, low on-state resistance, and fast switching speeds make it an ideal choice for use in portable devices, industrial applications, and power management circuits. With its wide availability and compliance with RoHS and REACH standards, it is a reliable and sustainable component for modern electronic designs.