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CSD19538Q2
Brand：TI
Package：---
Category：
D/C：24+
MOQ：
Datasheet：---
In-Stock：4947
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Product Attributes
Mfr
Texas Instruments
Series
NexFET™
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
14.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
454 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 20.2W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Product Description
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