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2N7002
2N7002
Brand:ONSEMI
Package:---
Category:Discrete Semiconductor Products
D/C:within 3 years
MOQ:
Datasheet:---
In-Stock:11360
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Product Attributes
Mfr
Diotec Semiconductor
Series
-
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250?A
Vgs (Max)
?30V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
350mW (Ta)
Operating Temperature
150?C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Product Description

1. General Introduction

The 2N7002 is a popular N - channel enhancement - mode metal - oxide - semiconductor field - effect transistor (MOSFET). MOSFETs are semiconductor devices used for switching and amplifying electronic signals. The 2N7002 is widely used in various electronic circuits due to its small size, low cost, and relatively good performance.


2. Key Features


2.1 N - Channel Enhancement - Mode

As an N - channel enhancement - mode MOSFET, the 2N7002 is normally off when there is no voltage applied to its gate terminal. A positive voltage applied to the gate with respect to the source is required to turn the transistor on and allow current to flow from the drain to the source. This characteristic makes it suitable for use in switching applications where a control signal can be used to turn the device on and off.


2.2 Low Threshold Voltage

The 2N7002 has a relatively low threshold voltage (VGS(th)). The threshold voltage is the minimum gate - to - source voltage required to start conducting current between the drain and the source. A low threshold voltage means that the transistor can be easily turned on with a relatively small control voltage, which is beneficial for interfacing with low - voltage control circuits such as microcontrollers.


2.3 Low On - Resistance (RDS(on))

It has a low on - resistance when the transistor is in the on state. Low on - resistance results in less power dissipation and lower voltage drop across the device when current is flowing. This is important in power - switching applications, as it helps to reduce energy losses and heat generation, improving the overall efficiency of the circuit.


2.4 Small Package Size

The 2N7002 is available in small - sized packages such as the SOT - 23 surface - mount package. The compact package makes it suitable for use in space - constrained applications, such as in mobile devices, portable electronics, and other miniaturized circuits.


2.5 High Input Impedance

The MOSFET has a very high input impedance at the gate terminal. This means that it draws very little current from the control circuit, which is an advantage when driving the transistor from a low - power source. It also allows for easy interfacing with high - impedance signal sources without loading them significantly.


3. Applications


3.1 Switching Applications

One of the most common applications of the 2N7002 is in switching circuits. It can be used to switch small - to - medium - power loads, such as LEDs, relays, and small motors. For example, in a LED driver circuit, the 2N7002 can be used to turn the LED on and off based on a control signal from a microcontroller.


3.2 Voltage Level Shifting

The 2N7002 can be used for voltage level shifting. It can interface between different voltage domains, allowing a low - voltage control signal to switch a higher - voltage load. This is useful in systems where different components operate at different voltage levels, such as in a mixed - voltage digital circuit.


3.3 Signal Amplification

Although not as commonly used for amplification as bipolar junction transistors in some cases, the 2N7002 can still be used for small - signal amplification. It can amplify low - level input signals in applications where a small amount of gain is required, such as in some audio pre - amplifier circuits.


3.4 Battery - Powered Devices

In battery - powered devices, the low power consumption and small size of the 2N7002 make it a suitable choice for various functions. It can be used to manage power distribution, control the charging and discharging of batteries, and drive small loads while minimizing power consumption.


4. Electrical Specifications


4.1 Drain - Source Voltage (VDS)

The maximum drain - source voltage that the 2N7002 can withstand is typically around 60V. This voltage rating determines the maximum voltage that can be applied across the drain and source terminals without causing damage to the device.


4.2 Gate - Source Voltage (VGS)

The maximum gate - source voltage is usually specified, typically around ±20V. Applying a voltage outside this range to the gate - source terminal can damage the MOSFET's gate oxide layer.


4.3 Drain Current (ID)

The continuous drain current rating of the 2N7002 is an important parameter. It indicates the maximum amount of current that can flow through the drain - source path under normal operating conditions. The rating is typically in the range of a few hundred milliamperes.


4.4 Threshold Voltage (VGS(th))

The threshold voltage is typically in the range of 1V to 2.5V. This value determines the minimum gate - to - source voltage required to start the conduction of current between the drain and the source.


In summary, the 2N7002 is a versatile N - channel MOSFET that offers a range of features suitable for a wide variety of electronic applications, especially those requiring small - scale switching and low - power operation.

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